Optical rectification at semiconductor surfaces

Optical rectification at semiconductor surfaces.

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

S. Tongay, M. Lemaitre, X. Miao, B. Gila, B. R. Appleton, and A. F. Hebard Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA Department of Physics, University of Florida, Gainesville, Florida 32611, USA Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32611, USA (Received 24 May 2011; published 17 J...

Electron states and recombination velocities at semiconductor surfaces and interfaces

2014 The concept of dangling bond states is reviewed. It is shown that the Schottky barrier height can be correlated with the average self energy of surface dangling bonds. The same property holds true for band offsets at semiconductor heterojunctions. The model explains the relation found by Tersoff between these two quantities. A second part is devoted to the theoretical determination of surf...

Semiconductor Diode Rectification ( Adapted for ECE 305 W ' 99 )

Objective Preferably (in general) electronic circuitry is energized from a voltage source, i.e., a source for which ideally no current flows under open-circuit conditions. Absent the need to maintain the load current stand-by power dissipation will be minimal. In addition a DC (unipolar constant voltage) power supply virtually always is preferable over an AC supply for electronic equipment. An ...

Semiconductor optical amplifiers at 2.0-μm wavelength on silicon

P A P ER Abstract A semiconductor optical amplifier at 2.0-μm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP-based active region to a silicon substrate. It is therefore compatible with low-cost and highvolume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On-chip gain...